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| (R) STPS640CT/CF/CB POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM Tj (max) VF (max) FEATURES AND BENEFITS VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREMELY FAST SWITCHING LOW FORWARD DROP VOLTAGE LOW CAPACITANCE LOW THERMAL RESISTANCE INSULATED PACKAGE: Insulating voltage = 2000V DC Capacitance = 12pF SMD PACKAGE (tape and reel option: -TR) DESCRIPTION Dual Schottky rectifier suited to Switch Mode Power Supplies and other Power Converters. This device is intended for use in low and medium voltage operation, and particulary, in high frequency circuitries where low switching losses are required (free wheeling and polarity protection). ABSOLUTE RATINGS (limiting values, per diode) Symbol VRRM IF(RMS) IF(AV) RMS forward current Average forward current = 0.5 Parameter Repetitive peak reverse voltage TO-220AB / ISOWATT220AB DPAK TO-220AB ISOWATT220AB DPAK IFSM IRRM Tstg Tj dV/dt Surge non repetitive forward current Repetitive peak reverse current Storage temperature range Critical rate of rise of reverse voltage Tc = 135C Tc = 130C Tc = 120C 75 1 - 65 to + 150 150 10000 A A C C V/s 1/6 2 x3A 40 V 150 C 0.57 V A1 K A2 K A2 A1 DPAK STPS640CB A1 K A2 A1 K A2 TO-220AB STPS640CT ISOWATT220AB STPS640CF Value 40 10 6 3 Unit V A A tp = 10 ms Sinusoidal tp = 2 s F = 1kHz square Maximum operating junction temperature August 1999 - Ed: 4A STPS640CT/CF/CB THERMAL RESISTANCES Symbol Rth (j-c) Junction to case Parameter TO-220AB/ DPAK ISOWATT220AB Rth(c) Coupling TO-220AB ISOWATT220AB Per diode Total Per diode Total Value 5.5 3 7.5 5.2 0.5 3 Unit C/W C/W When the diodes 1 and 2 are used simultaneously: Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol IR * VF * Tests Conditions Reverse leakage current Forward voltage drop Tj = 25C Tj = 125C Tj = 25C Tj = 25C Tj = 125C Tj = 125C Pulse test : * tp = 380 s, < 2% Min. VR = VRRM Typ. 2 Max. 100 10 0.63 0.84 0.57 0.72 Unit A mA V IF = 3 A IF = 6 A IF = 3 A IF = 6 A 0.5 0.67 To evaluate the maximum conduction losses use the following equation : P = 0.42 x IF(AV) + 0.050 IF2(RMS) Fig. 1: Average forward power dissipation versus average forward current (per diode). PF(av)(W) 2.50 = 0.05 2.25 2.00 1.75 1.50 1.25 1.00 0.75 0.50 0.25 0.00 0.0 0.5 1.0 Fig. 2: Average current versus ambient temperature ( = 0.5, per diode). IF(av)(A) = 0.1 = 0.2 = 0.5 4.0 3.5 =1 Rth(j-a)=Rth(j-c) TO-220AB/DPAK 3.0 ISOWATT220AB 2.5 2.0 1.5 Rth(j-a)=15C/W T T 1.0 tp IF(av) (A) 1.5 2.0 2.5 =tp/T 0.5 4.0 0.0 0 =tp/T tp Tamb(C) 50 75 100 125 150 3.0 3.5 25 2/6 STPS640CT/CF/CB Fig. 3-1: Non repetitive surge peak forward current versus overload duration. (Maximum values, per diode) (TO-220AB/ DPAK). IM(A) 45 40 35 30 25 20 15 IM 10 5 0 1E-3 Fig. 3-2: Non repetitive surge peak forward current versus overload duration. (Maximum values, per diode) (ISOWATT220AB). IM(A) 40 35 30 25 Tc=75C Tc=100C Tc=135C t 20 15 10 5 0 1E-3 IM t Tc=75C Tc=100C Tc=130C =0.5 t(s) 1E-2 1E-1 1E+0 =0.5 t(s) 1E-2 1E-1 1E+0 Fig. 4.1: Relative variation of thermal transient impedance junction to case versus pulse duration (TO-220AB / DPAK). Zth(j-c)/Rth(j-c) 1.0 0.8 0.6 0.4 0.2 0.0 1E-3 = 0.5 Fig. 4-2: Relative variation of thermal transient impedance junction to case versus pulse duration (ISOWATT220AB). Zth(j-c)/Rth(j-c) 1.0 0.8 0.6 0.4 T = 0.2 = 0.5 = 0.2 = 0.1 Single pulse 0.2 tp(s) 1E-2 1E-1 =tp/T tp = 0.1 T Single pulse tp(s) 1E+0 0.0 1E-3 =tp/T tp 1E-2 1E-1 1E+0 1E+1 Fig. 5: Reverse leakage current versus reverse voltage applied (typical values, per diode). IR(A) 1E-2 Tj=150C Tj=125C Fig. 6: Junction capacitance versus reverse voltage applied (typical values, per diode). C(pF) 500 F=1MHz Tj=25C 1E-3 100 Tj=100C 1E-4 Tj=75C VR(V) 1E-5 0 5 10 15 20 25 30 35 40 10 VR(V) 1 2 5 10 20 50 3/6 STPS640CT/CF/CB Fig. 7: Forward voltagedrop versus forwardcurrent (maximum values, per diode). Fig. 8: Thermal resistance junctionto ambient versus copper surface under tab (Epoxy printed circuit board FR4, copper thickness: 35m). Rth(j-a) (C/W) 80 70 Typical values Tj=150C 10.0 IFM(A) 60 50 Tj=125C 1.0 40 30 20 VFM(V) 0.1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 10 0 0 4 8 12 S(Cu) (cm ) 16 20 24 28 32 36 40 PACKAGE MECHANICAL DATA TO-220AB DIMENSIONS REF. A C D E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 M Diam. Millimeters Min. Max. 4.40 4.60 1.23 1.32 2.40 2.72 0.49 0.70 0.61 0.88 1.14 1.70 1.14 1.70 4.95 5.15 2.40 2.70 10 10.40 16.4 typ. 13 14 2.65 2.95 15.25 15.75 6.20 6.60 3.50 3.93 2.6 typ. 3.75 3.85 Inches Min. Max. 0.173 0.181 0.048 0.051 0.094 0.107 0.019 0.027 0.024 0.034 0.044 0.066 0.044 0.066 0.194 0.202 0.094 0.106 0.393 0.409 0.645 typ. 0.511 0.551 0.104 0.116 0.600 0.620 0.244 0.259 0.137 0.154 0.102 typ. 0.147 0.151 H2 Dia L5 C A L7 L6 L2 F2 F1 L9 L4 F G1 G M E D 4/6 STPS640CT/CF/CB PACKAGE MECHANICAL DATA DPAK DIMENSIONS REF. A A1 A2 B B2 C C2 D E G H L2 L4 V2 Millimeters Min. Max 2.20 2.40 0.90 1.10 0.03 0.23 0.64 0.90 5.20 5.40 0.45 0.60 0.48 0.60 6.00 6.20 6.40 6.60 4.40 4.60 9.35 10.10 0.80 typ. 0.60 1.00 0 8 Inches Min. Max. 0.086 0.094 0.035 0.043 0.001 0.009 0.025 0.035 0.204 0.212 0.017 0.023 0.018 0.023 0.236 0.244 0.251 0.259 0.173 0.181 0.368 0.397 0.031 typ. 0.023 0.039 0 8 FOOTPRINT DIMENSIONS (in millimeters) 6.7 6.7 3 3 1.6 2.3 2.3 1.6 5/6 STPS640CT/CF/CB PACKAGE MECHANICAL DATA ISOWATT220AB DIMENSIONS REF. A B D E F F1 F2 G G1 H L2 L3 L4 L6 L7 Diam Millimeters Min. Max. 4.40 4.60 2.50 2.70 2.50 2.75 0.40 0.70 0.75 1.00 1.15 1.70 1.15 1.70 4.95 5.20 2.40 2.70 10.00 10.40 16.00 typ. 28.60 30.60 9.80 10.60 15.90 16.40 9.00 9.30 3.00 3.20 Inches Min. Max. 0.173 0.181 0.098 0.106 0.098 0.108 0.016 0.028 0.030 0.039 0.045 0.067 0.045 0.067 0.195 0.205 0.094 0.106 0.394 0.409 0.630 typ. 1.125 1.205 0.386 0.417 0.626 0.646 0.354 0.366 0.118 0.126 Ordering type STPS640CT STPS640CB STPS640CB-TR STPS640CF Marking STPS640CT S640C S640C STPS640CF Package TO-220AB DPAK DPAK ISOWATT220AB Weight 2.20g 0.30g 0.30g 2.08g Base qty 50 75 2500 50 Delivery mode Tube Tube Tape and reel Tube Epoxy meets UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 6/6 |
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